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Bismuth catalyzed growth of silicon nanowires by electron beam evaporation

Kumar, Rakesh R and Rao, Narasimha K and Phani, AR (2012) Bismuth catalyzed growth of silicon nanowires by electron beam evaporation. In: MATERIALS LETTERS, 82 . pp. 163-166.

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Official URL: http://dx.doi.org/10.1016/j.matlet.2012.05.090


Silicon nanowires (NWs) have been grown in the vapor phase for the first time with bismuth (Bi) as a catalyst using the electron beam evaporation method at a low substrate temperature of 280 degrees C. The grown Si nanowires were randomly oriented on the substrate with an average length of 900 nm for a deposition time of 15 min. Bi faceted nanoparticles (crowned) at the end of the grown Si nanowires have been observed and attributed to the Vapor-Liquid-Solid (VLS) growth mechanism. Transmission Electron Microscopy analysis on the nanowires revealed their single crystalline nature and interestingly bismuth particles were observed in Si nanowires. The obtained results have shown a new window for Si nanowires growth with bismuth as a catalyst. (C) 2012 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to Elsevier
Keywords: Semiconductors; Silicon nanowires; Bismuth catalyst; Electron beam evaporation; Thin films
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 17 Sep 2012 10:33
Last Modified: 17 Sep 2012 10:33
URI: http://eprints.iisc.ac.in/id/eprint/45063

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