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Light Induced Optical Properties Change in Sb20S40Se40 Thin Films

Naik, Ramakanta and Parida, Sanjit K and Vinod, EM and Ganesan, R and Sangunni, KS (2012) Light Induced Optical Properties Change in Sb20S40Se40 Thin Films. In: International Workshop on Functional Materials (IWFM), DEC 20-22, 2011 , Natl Inst Sci Technol (NIST), Berhampur, INDIA, pp. 358-362.

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Official URL: http://dx.doi.org/10.1063/1.4736921


Thin films of Sb20S40Se40 of thickness 800 nm were prepared by thermal evaporation method. The as-prepared and illuminated thin films were studied by X-ray diffraction, Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy and Raman spectroscopy. The optical band gap was reduced due to photo induced effects along with the increase in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS and Raman spectra supports the optical changes happening in the film due to light exposure.

Item Type: Conference Proceedings
Series.: AIP Conference Proceedings
Additional Information: Copyright for this article belongs to the American Institute of Physics
Keywords: Thin films; Optical properties; XPS; Raman shift
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 10 Sep 2012 12:22
Last Modified: 11 Sep 2012 06:04
URI: http://eprints.iisc.ac.in/id/eprint/45010

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