High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

Thakare, Vishal and Xing, Guozhong and Peng, Haiyang and Rana, Abhimanyu and Game, Onkar and Kumar, P Anil and Banpurkar, Arun and Kolekar, Yesappa and Ghosh, Kartik and Wu, Tom and Sarma, D D and Ogale, Satishchandra B (2012) High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure. In: APPLIED PHYSICS LETTERS, 100 (17).

PDF AIP_APP_PHY_LET_100_2012.pdf Restricted to Registered users only Download (1MB) | Request a copy

Abstract

The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the ``magnetic'' aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (similar to 0-100 mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4707373]

Item Type:	Journal Article
Publication:	APPLIED PHYSICS LETTERS
Publisher:	American Institute of Physics
Additional Information:	Copy right of this article belongs to American Institute of Physics
Keywords:	TRANSITION;MANGANITES;INTERFACE;MEMORIES
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	09 Jul 2012 09:58
Last Modified:	09 Jul 2012 09:58
URI:	http://eprints.iisc.ac.in/id/eprint/44603

Actions (login required)

View Item