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Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

Prasanna, S and Mohan, Rao G and Jayakumar, S and Kannan, MD and Ganesan, V (2012) Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films. In: THIN SOLID FILMS, 520 (7). pp. 2689-2694.

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Official URL: http://dx.doi.org/10.1016/j.tsf.2011.11.040


Alumina (Al2O3) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 degrees C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance. AC conductivity and activation energy were determined and the results are discussed. (C) 2011 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to Elsevier
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 20 Jun 2012 12:18
Last Modified: 20 Jun 2012 12:18
URI: http://eprints.iisc.ac.in/id/eprint/44553

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