Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy

Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Bhat, Thirumaleshwara N and Kalghatgi, AT and Krupanidhi, SB (2012) Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy. In: Physica Status Solidi B, 249 (1). pp. 58-61.

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Abstract

Hexagonal Ge3N4 layer was prepared on Ge surface by in situ direct atomic source nitridation and it is promising buffer layer to grow GaN on Ge (111). The valence band offset (VBO) of GaN/Ge3N4/Ge heterojunctions is determined by X-ray photoemission spectroscopy. The valence band (VB) of Ge3N4 is found to be 0.38?+/-?0.04?eV above the GaN valance band and 1.14?+/-?0.04?eV below the Ge. The GaN/Ge3N4 and Ge3N4/Ge are found type-II and type-I heterojunctions, respectively. The exact measurements of the VBO and conduction band offset (CBO) are important for use of GaN/Ge3N4/Ge (111) heterosystems.

Item Type:	Journal Article
Publication:	Physica Status Solidi B
Publisher:	John Wiley and Sons
Additional Information:	Copyright of this article belongs to John Wiley and Sons.
Keywords:	band offset;GaN;heterojunctions;MBE;nitridation;XPS
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	18 May 2012 08:58
Last Modified:	18 May 2012 08:58
URI:	http://eprints.iisc.ac.in/id/eprint/44414

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