Chirakkara, Saraswathi and Krupanidhi, SB (2012) Gallium and indium co-doped ZnO thin films for white light emitting diodes. In: Physica Status Solidi - Rapid Research Letters, 6 (1). pp. 34-36.
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Abstract
Ga and In co-doped ZnO (GIZO) thin films together with ZnO, In-doped ZnO (IZO), Ga-doped ZnO (GZO), and IZO/GZO multilayer for comparison, were grown on corning glass and boron doped Si substrates by PLD. The photoluminescence spectra of GIZO showed a strong white light emission and the current-voltage characteristics showed relatively lower turn-on voltage and larger forward current. The CIE coordinates for GIZO were observed to be (0.31, 0.33) with a correlated colour temperature of 6650 K, indicating a cool white light, and establishing a possibility of white light emitting diodes. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Item Type: | Journal Article |
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Publication: | Physica Status Solidi - Rapid Research Letters |
Publisher: | John Wiley and Sons |
Additional Information: | Copyright of this article belongs to John Wiley and Sons. |
Keywords: | ZnO;doping;multilayers;photoluminescence |
Department/Centre: | Division of Chemical Sciences > Materials Research Centre |
Date Deposited: | 28 Mar 2012 06:11 |
Last Modified: | 28 Mar 2012 06:11 |
URI: | http://eprints.iisc.ac.in/id/eprint/44096 |
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