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Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy. In: Japanese Journal of Applied Physics, 51 (2).

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In0.2Ga0.8N layers were directly grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using the standard Vegard's law. High-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In0.2Ga0.8N/Si(111) heterojunctions. The valence band of InGaN is found to be 2.08 +/- 0.04 eV below that of Si. The conduction band offset (CBO) of InGaN/Si heterojunction is found similar to 0.74 eV and a type-II heterojunction. (C) 2012 The Japan Society of Applied Physics

Item Type: Journal Article
Publication: Japanese Journal of Applied Physics
Publisher: Institute of Pure and Applied Physics
Additional Information: Copyright of this article belongs to Institute of Pure and Applied Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 28 Mar 2012 05:27
Last Modified: 28 Mar 2012 06:56
URI: http://eprints.iisc.ac.in/id/eprint/44093

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