Bhuvaneswari, HB and Priya, Nithiya I and Chandramani, R and Reddy, Rajagopal V and Rao, Mohan G (2003) Studies on zirconium nitride films deposited by reactive magnetron sputtering. In: Crystal Research and Technology, 38 (12). pp. 1047-1051.
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This paper deals with the preparation of Zirconium Nitride films by DC reactive magnetron sputtering. Films were deposited on silicon substrates at room temperature. Nitrogen partial pressure was varied from $4 \times 10^{-5} to 10 \times 10^{-5}$ m bar and the effect on the structural, electrical, optical properties of the films was systematically studied. The films formed at a nitrogen pressure of $6 \times 10^{-5}$ mbar showed low electrical resistivity of $1.726 \times 10^{-3} \Omega . cm.$ The deposited films were found to be crystalline with refractive index and extinction coefficient 1.95 and 0.4352 respectively.
| Item Type: | Journal Article |
|---|---|
| Publication: | Crystal Research and Technology |
| Publisher: | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
| Additional Information: | The copyright belongs to WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| Keywords: | zirconium nitride;silicon thin films;dc reactive magnetron sputtering;optical constants;electrical resistivity |
| Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
| Date Deposited: | 14 Dec 2005 |
| Last Modified: | 27 Aug 2008 11:37 |
| URI: | http://eprints.iisc.ac.in/id/eprint/4383 |
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