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Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kalghatgi, Ajit T and Krupanidhi, SB (2011) Transport and infrared photoresponse properties of InN nanorods/Si heterojunction. In: Nanoscle Research Letters, 6 .

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The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN NRs have sharp peaks E(2)(high) at 490.2 cm(-1) and A(1)(LO) at 591 cm(-1). The current transport mechanism of the NRs is limited by three types of mechanisms depending on applied bias voltages. The electrical transport properties of the device were studied in the range of 80 to 450 K. The faster rise and decay time indicate that the InN NRs/n-Si heterojunction is highly sensitive to IR light.

Item Type: Journal Article
Publication: Nanoscle Research Letters
Publisher: Springer
Additional Information: Copyright of this article belongs to Springer.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 16 Feb 2012 08:59
Last Modified: 16 Feb 2012 08:59
URI: http://eprints.iisc.ac.in/id/eprint/43452

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