Evidences for ambient oxidation of indium nitride quantum dots

Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Krupanidhi, SB and Sinha, Neeraj (2011) Evidences for ambient oxidation of indium nitride quantum dots. In: Physica Status Solidi B, 248 (12). pp. 2853-2856.

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Abstract

Investigations were carried out on the ambient condition oxidation of self-assembled, fairly uniform indium nitride (InN) quantum dots (QDs) fabricated on p-Si substrates. Incorporation of oxygen in to the outer shell of the QDs was confirmed by the results of transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS). As a consequence, a weak emission at high energy (similar to 1.03?eV) along with a free excitonic emission (0.8?eV) was observed in the photoluminescence spectrum. The present results confirm the incorporation of oxygen into the lattice of the outer shell of InN QDs, affecting their emission properties. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Item Type:	Journal Article
Publication:	Physica Status Solidi B
Publisher:	John Wiley and Sons
Additional Information:	Copyright of this article belongs to John Wiley and Sons.
Keywords:	InN;In2O3;molecular beam epitaxy;oxidation;quantum dots
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	03 Feb 2012 12:21
Last Modified:	03 Feb 2012 12:21
URI:	http://eprints.iisc.ac.in/id/eprint/43395

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