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Dislocation mechanisms for plastic flow of nickel in the temperature range 4.2 – 1200 K

Tangri, K and Sastry, DH (1975) Dislocation mechanisms for plastic flow of nickel in the temperature range 4.2 – 1200 K. In: Philosophical Magazine, 32 (3). pp. 513-525.

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Official URL: http://www.tandfonline.com/doi/abs/10.1080/1478643...


The temperature ranges of thermal and athermal deformation behaviour of nickel are identified by employing the temperature-dependence of flow-stress and strain-rate cycling data. The results are used to present a unified view of dislocation mechanisms of glide encompassing the two thermally activated and the intermediate athermal regimes of plastic flow.In the low-temperature thermally activated region (<250 K) the strain rate is found to be controlled by the repulsive intersection of glide and forest dislocations, in accordance with current ideas. The athermal stress in this region can be attributed mainly to the presence of strong attractive junctions which are overcome by means of Orowan bowing, a small contribution also coming from the elastic interactions between dislocations. The values of activation area and activation energy obtained in the high-temperature region (> 750 K) negate the operation of a diffusion-controlled mechanism. Instead, the data support a thermal activation model involving unzipping of the attractive junctions. The internal (long-range) stress contribution here results solely from the elastic interactions between dislocations. This view concerning the high-temperature plastic flow is further supported by the observation that the Cottrell–Stokes law is obeyed over large strains in the range 750–1200 K.

Item Type: Journal Article
Publication: Philosophical Magazine
Publisher: Taylor and Francis Group
Additional Information: Copyright of this article belongs to Taylor and Francis Group.
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 23 Feb 2012 06:25
Last Modified: 23 Feb 2012 06:25
URI: http://eprints.iisc.ac.in/id/eprint/43184

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