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Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy

Bhat, Thirumaleshwara N and Kumar, Mahesh and Rajpalke, Mohana K and Roul, Basanta and Krupanidhi, SB and Sinha, Neeraj (2011) Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy. In: Journal of Applied Physics, 109 (12). p. 123707.

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The band offsets in InN/p-Si heterojunctions are determined by high resolution x-ray photoemission spectroscopy. The valence band of InN is found to be 1.39 eV below that of Si. Given the bandgap of 0.7 eV for InN, a type-III heterojunction with a conduction band offset of 1.81 eV was found. Agreement between the simulated and experimental data obtained from the heterojunction spectra was found to be excellent, establishing that the method of determination was accurate. The charge neutrality level (CNL) model provided a reasonable description of the band alignment of the InN/p-Si interface and a change in the interface dipole by 0.06 eV was observed for InN/p-Si interface.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 03 Jan 2012 09:24
Last Modified: 03 Jan 2012 09:24
URI: http://eprints.iisc.ac.in/id/eprint/43000

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