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Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering

Dhananjay, * and Krupanidhi, SB (2006) Dielectric properties of c-axis oriented Zn1-xMgxO thin films grown by multimagnetron sputtering. In: Applied Physics Letters, 89 (8). 082905-082905.

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Zn1−xMgxO (x = 0.3) thin films have been fabricated on Pt/TiO2/SiO2/Si substrates using multimagnetron sputtering technique. The films with wurtzite structure showed a (002) preferred orientation. Ferroelectricity in Zn1−xMgxO films was established from the temperature dependent dielectric constant and the polarization hysteresis loop. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The resistivity versus temperature characteristics showed an anomalous increase in the vicinity of the dielectric transition temperature. The Zn1−xMgxO thin films exhibit well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μC/cm2 and coercive field of 8 kV/cm at room temperature.

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 27 Feb 2012 11:16
Last Modified: 27 Feb 2012 11:16
URI: http://eprints.iisc.ac.in/id/eprint/42994

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