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Growth and characterization of SrBi2Nb2O9 thin films by pulsed-laser ablation

Bhattacharyya, S and Bharadwaja, SSN and Krupanidhi, SB (1999) Growth and characterization of SrBi2Nb2O9 thin films by pulsed-laser ablation. In: Applied Physics Letters, 75 (17). pp. 2656-2658.

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Polycrystalline films of SrBi2Nb2O9 were grown using pulsed-laser ablation. The ferroelectric properties were achieved by low-temperature deposition followed by a subsequent annealing process. The lower switching voltage was obtained by lowering the thickness, which did not affect the insulating nature of the films. The hysteresis results showed an excellent square-shaped loop with results (Pr = 6 μC/cm2, Ec = 100 kV/cm) in good agreement with earlier reports. The films also exhibited a dielectric constant of 250 and a dissipation factor of 0.02. The transport studies indicated an ohmic behavior, while higher voltages induced a bulk space charge.

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 26 Dec 2011 06:57
Last Modified: 26 Dec 2011 06:57
URI: http://eprints.iisc.ac.in/id/eprint/42884

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