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Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films

Roul, Basanta and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Kumar, Mahesh and Kalghatgi, AT and Krupanidhi, SB and Kumar, Nitesh and Sundaresan, A (2011) Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films. In: Applied Physics Letters, 99 (16).

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We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm(-1) in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy. (C) 2011 American Institute of Physics. [doi:10.1063/1.3654151]

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Keywords: ferromagnetic materials;gallium compounds;III-V semiconductors;magnetic epitaxial layers;molecular beam epitaxial growth;photoluminescence;plasma materials processing; Raman spectra; semiconductor epitaxial layers; semiconductor growth; semimagnetic semiconductors; vacancies (crystal); wide band gap semiconductors; X-ray photoelectron spectra
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 07 Dec 2011 06:34
Last Modified: 07 Dec 2011 06:34
URI: http://eprints.iisc.ac.in/id/eprint/42533

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