Nature of Electronic States in Atomically Thin MoS(2) Field-Effect Transistors

Ghatak, Subhamoy and Pal, Atindra Nath and Ghosh, Arindam (2011) Nature of Electronic States in Atomically Thin MoS(2) Field-Effect Transistors. In: ACS Nano, 5 (10). pp. 7707-7712.

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Abstract

We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS(2) films, mechanically exfoliated onto Si/SiO(2) substrate. Our experiments reveal that the electronic states In all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below similar to 30 K, the conductivity displays oscillatory structures In gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T(0)) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges In the substrate is the dominant source of disorder in MoS(2) field-effect devices, which leads to carrier localization, as well.

Item Type:	Journal Article
Publication:	ACS Nano
Publisher:	American Chemical Society
Additional Information:	Copyright of this article belongs to American Chemical Society.
Keywords:	dichalcogenides;field-effect transistor;MoS(2);localization; Mott variable range hopping;resonant tunneling;charge impurity scattering
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	23 Nov 2011 11:14
Last Modified:	23 Nov 2011 11:14
URI:	http://eprints.iisc.ac.in/id/eprint/42289

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