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Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes

Roul, Basanta and Kumar, Mahesh and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes. In: Journal of Applied Physics, 110 (6).

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GaN films were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). The effect of N/Ga flux ratio on structural, morphological, and optical properties was studied. The dislocation density found to increase with increasing the N/Ga ratio. The surface morphology of the films as seen by scanning electron microscopy shows pits on the surface and found that the pit density on the surface increases with N/Ga ratio. The room temperature photoluminescence study reveals the shift in band-edge emission toward the lower energy with increase in N/Ga ratio. This is believed to arise from the reduction in compressive stress in the films as is evidenced by room temperature Raman study. The transport studied on the Pt/GaN Schottky diodes showed a significant increase in leakage current with an increase in N/Ga ratio and was found to be caused by the increase in pit density as well as increase in dislocation density in the GaN films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3634116]

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 08 Nov 2011 11:46
Last Modified: 08 Nov 2011 11:46
URI: http://eprints.iisc.ac.in/id/eprint/41934

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