Electroluminescence from GaN-polymer heterojunction

Chitara, Basant and Lal, Nidhi and Krupanidhi, SB and Rao, CNR (2011) Electroluminescence from GaN-polymer heterojunction. In: Journal of Luminescence, 131 (12). pp. 2612-2615.

PDF Electroluminescence.pdf - Published Version Restricted to Registered users only Download (400kB) | Request a copy

Abstract

Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). (C) 2011 Elsevier B.V. All rights reserved.

Item Type:	Journal Article
Publication:	Journal of Luminescence
Publisher:	Elsevier Science B.V.
Additional Information:	Copyright of this article belongs to Elsevier Science B.V.
Keywords:	Electroluminescence;GaN;Inorganic-Organic heterojunction
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	30 Sep 2011 06:07
Last Modified:	30 Sep 2011 06:07
URI:	http://eprints.iisc.ac.in/id/eprint/41002

Actions (login required)

View Item