Study of band offsets in InN/Ge heterojunctions

Kumar, Mahesh and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Roul, Basanta and Sinha, Neeraj and Kalghatgi, AT and Krupanidhi, SB (2011) Study of band offsets in InN/Ge heterojunctions. In: Surface Science, 605 (15-16). L33-L37.

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Abstract

InN layers were directly grown on Ge substrate by plasma-assisted molecular beam epitaxy (PAMBE). The valence band offset (VBO) of wurtzite InN/Ge heterojunction is determined by X-ray photoemission spectroscopy (XPS). The valence band of Ge is found to be 0.18 +/- 0.04 eV above that of InN and a type-II heterojunction with a conduction band offset (CBO) of similar to 0.16 eV is found. The accurate determination of the VBO and CBO is important for the design of InN/Ge based electronic devices. (C) 2011 Elsevier B.A. All rights reserved.

Item Type:	Journal Article
Publication:	Surface Science
Publisher:	Elsevier Science B.V.
Additional Information:	Copyright of this article belongs to Elsevier Science B.V.
Keywords:	Molecular beam epitaxy;Indium nitride;Heterojunction;X-ray photoemission spectroscopy
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	16 Sep 2011 09:10
Last Modified:	16 Sep 2011 09:10
URI:	http://eprints.iisc.ac.in/id/eprint/40555

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