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Epitaxial LaNiO3 thin films: A normal metal barrier for SNS junction

Hegde, MS and Satyalakshmi, KM and Mallya, RM and Rajeswari, M and Zhang, H (1994) Epitaxial LaNiO3 thin films: A normal metal barrier for SNS junction. In: Journal of Materials Research, 9 (4). pp. 898-902.

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Epitaxial LaNiO3 thin films have been grown on SrTiO3 and several other substrates by pulsed laser deposition. The films are observed to be metallic down to 15 K, and the temperature dependence of resistivity is similar to that of bulk LaNiO3. Epitaxial, c-axis oriented YBa2Cu3O7-x films with good superconducting properties have been grown on the LaNiO3 (100) films. I-V characteristics of the YBa2Cu3O7-x-LaNiO3 junction are linear, indicating ohmic contact between them.

Item Type: Journal Article
Publication: Journal of Materials Research
Publisher: Cambridge University Press
Additional Information: Copyright of this article belongs to Cambridge University Press.
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 11 Aug 2011 13:11
Last Modified: 07 Jan 2013 05:56
URI: http://eprints.iisc.ac.in/id/eprint/39859

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