Hegde, MS and Satyalakshmi, KM and Mallya, RM and Rajeswari, M and Zhang, H (1994) Epitaxial LaNiO3 thin films: A normal metal barrier for SNS junction. In: Journal of Materials Research, 9 (4). pp. 898-902.
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Abstract
Epitaxial LaNiO3 thin films have been grown on SrTiO3 and several other substrates by pulsed laser deposition. The films are observed to be metallic down to 15 K, and the temperature dependence of resistivity is similar to that of bulk LaNiO3. Epitaxial, c-axis oriented YBa2Cu3O7-x films with good superconducting properties have been grown on the LaNiO3 (100) films. I-V characteristics of the YBa2Cu3O7-x-LaNiO3 junction are linear, indicating ohmic contact between them.
| Item Type: | Journal Article |
|---|---|
| Publication: | Journal of Materials Research |
| Publisher: | Cambridge University Press |
| Additional Information: | Copyright of this article belongs to Cambridge University Press. |
| Department/Centre: | Division of Chemical Sciences > Solid State & Structural Chemistry Unit Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) |
| Date Deposited: | 11 Aug 2011 13:11 |
| Last Modified: | 07 Jan 2013 05:56 |
| URI: | http://eprints.iisc.ac.in/id/eprint/39859 |
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