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Study of pulsed laser ablated CaBi2Ta2O9 thin films

Dasa, Rasmi R and Krupanidhi, SB and Katiyar, Ram S and Péreza, W (2001) Study of pulsed laser ablated CaBi2Ta2O9 thin films. In: Solid State Communications, 119 (3). pp. 127-131.

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Official URL: http://dx.doi.org/10.1016/S0038-1098(01)00234-4


Polycrystalline CaBi2Ta2O9 thin films were grown on Pt/TiO2/SiO2/Si (100) substrates using a pulsed laser deposition technique. The influence of substrate temperature and oxygen pressure on crystallization and orientation of the films was studied. In-situ films deposited under a combination of higher substrate temperature and lower oxygen pressure exhibited a preferred c-axis orientation. Micro-Raman spectroscopy was used for complete understanding of phase evolution of CBT films. Thin films deposited at higher substrate temperatures showed larger grain size and higher surface roughness, observed by atomic force microscopy. The values of maximum polarization (2Pmnot, vert, similar13.4 μC/cm2), remanent polarization (2Prnot, vert, similar4.6 μC/cm2) and the coercive field Ec was about 112 kV/cm obtained for the film deposited at 650°C and annealed at 750°C. The room temperature, dielectric data revealed a dependence on the grain size.

Item Type: Journal Article
Publication: Solid State Communications
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: A. Ferroelectrics;A. Thin films;D. Dielectric response.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 01 Aug 2011 07:34
Last Modified: 01 Aug 2011 07:34
URI: http://eprints.iisc.ac.in/id/eprint/39630

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