Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

Hudait, MK and Venkateswarlu, P and Krupanidhi, SB (2001) Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures. In: Solid-State Electronics, 45 (1). pp. 133-141.

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Abstract

The current�voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80�300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T0 effect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the effective barrier height was observed and infer good quality of the GaAs film. No generation�recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study. The value of the Richardson constant was found to be 7.04 A K?2 cm?2, which is close to the value used for the determination of the zero-bias barrier height.

Item Type:	Journal Article
Publication:	Solid-State Electronics
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	GaAS;Schottky diodes;MOVPE;Ge.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	02 Aug 2011 06:40
Last Modified:	02 Aug 2011 06:40
URI:	http://eprints.iisc.ac.in/id/eprint/39540

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