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Optimization of off-oriented Ge substrates for MOVPE-grown GaAs solar cells

Hudait, MK and Krupanidhi, SB (2002) Optimization of off-oriented Ge substrates for MOVPE-grown GaAs solar cells. In: Defect and Diffusion Forum, 210-2 . pp. 15-20.

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GaAs/Ge heterostructures having abrupt interfaces were grown on 2degrees, 6degrees, and 9degrees off-cut Ge substrates and investigated by cross-sectional high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy, photoluminescence spectroscopy and electrochemical capacitance voltage (ECV) profiler. The GaAs films were grown on off-oriented Ge substrates with growth temperature in the range of 600-700degreesC, growth rate of 3-12 mum/hr and a V/III ratio of 29-88. The lattice indexing of HRTEM exhibits an excellent lattice line matching between GaAs and Ge substrate. The PL spectra from GaAs layer on 6degrees off-cut Ge substrate shows the higher excitonic peak compared with 2degrees and 9degrees off-cut Ge substrates. In addition, the luminescence intensity from the GaAs solar cell grown on 6degrees off-cut is higher than on 9degrees off-cut Ge substrates and signifies the potential use of 6degrees off-cut Ge substrate in the GaAs solar cells industry. The ECV profiling shows an abrupt film/substrate interface as well as between various layers of the solar cell structures.

Item Type: Journal Article
Publication: Defect and Diffusion Forum
Publisher: Trans Tech Publications Inc
Additional Information: Copyright of this article belongs to Trans Tech Publications Inc.
Keywords: off-oriented Ge substrates;GaAs;MOVPE;photoluminescence
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 21 Jul 2011 07:06
Last Modified: 21 Jul 2011 07:06
URI: http://eprints.iisc.ac.in/id/eprint/39321

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