Growth mechanism of phases by interdiffusion and atomic mechanism of diffusion in the molybdenum-silicon system

Prasad, S and Paul, A (2011) Growth mechanism of phases by interdiffusion and atomic mechanism of diffusion in the molybdenum-silicon system. In: Intermetallics, 19 (8). pp. 1191-1200.

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Abstract

Tracer diffusion coefficients are calculated in different phases in the Mo-Si system from diffusion couple experiments using the data available on thermodynamic parameters. Following, possible atomic diffusion mechanism of the species is discussed based on the crystal structure. Unusual diffusion behaviour is found in the Mo(5)Si(3) and Mo(3)Si phases, which indicate the nature of defects present on different sublattices. Further the growth mechanism of the phases is discussed and morphological evolution during interdiffusion is explained. (C) 2011 Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Publication:	Intermetallics
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	Molybdenum silicides;Intermetallic;Diffusion;Defects:point defects
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	18 Jul 2011 09:02
Last Modified:	18 Jul 2011 09:02
URI:	http://eprints.iisc.ac.in/id/eprint/39186

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