Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P delta layers

Shamim, Saquib and Mahapatra, Suddhasatta and Polley, Craig and Simmons, Michelle Y and Ghosh, Arindam (2011) Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P delta layers. In: Physical Review B: Condensed Matter and Materials Physics, 83 (23).

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Abstract

We report low-frequency 1/f-noise measurements of degenerately doped Si:P delta layers at 4.2 K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. The noise was nearly independent of magnetic field at low fields, indicating negligible contribution from universal conductance fluctuations. Instead, the interaction of electrons with very few active structural two-level systems may explain the observed noise magnitude.

Item Type:	Journal Article
Publication:	Physical Review B: Condensed Matter and Materials Physics
Publisher:	The American Physical Society
Additional Information:	Copyright of this article belongs to The American Physical Society.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	18 Jul 2011 08:28
Last Modified:	18 Jul 2011 08:28
URI:	http://eprints.iisc.ac.in/id/eprint/39085

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