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Studies on process induced deep levels in silicon

Rangaiah, SVP and Reddy, SV and Reddy, PN and Salkalachas, S and Rao, KSRK and Reddy, BPN (1998) Studies on process induced deep levels in silicon. In: Bulletin of Electrochemistry, 14 (11). pp. 394-397.

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An attempt was made to study the deep level impurities and defects introduced into thyristor grade silicon under different processing conditions. DLTS, C-V and I-V measurements were carried out. The ideality factors of the diodes is around 1-7. Activation energy, trap density and minority carrier lifetime were measured.

Item Type: Journal Article
Publication: Bulletin of Electrochemistry
Publisher: Scientific Publishers
Additional Information: Copyright of this article belongs to Scientific Publishers.
Keywords: Silicon;DLTS;carrier lifetime;C-V.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 12 Jul 2011 07:54
Last Modified: 12 Jul 2011 07:54
URI: http://eprints.iisc.ac.in/id/eprint/38771

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