Rangaiah, SVP and Reddy, SV and Reddy, PN and Salkalachas, S and Rao, KSRK and Reddy, BPN (1998) Studies on process induced deep levels in silicon. In: Bulletin of Electrochemistry, 14 (11). pp. 394-397.
Full text not available from this repository. (Request a copy)Abstract
An attempt was made to study the deep level impurities and defects introduced into thyristor grade silicon under different processing conditions. DLTS, C-V and I-V measurements were carried out. The ideality factors of the diodes is around 1-7. Activation energy, trap density and minority carrier lifetime were measured.
| Item Type: | Journal Article |
|---|---|
| Publication: | Bulletin of Electrochemistry |
| Publisher: | Scientific Publishers |
| Additional Information: | Copyright of this article belongs to Scientific Publishers. |
| Keywords: | Silicon;DLTS;carrier lifetime;C-V. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 12 Jul 2011 07:54 |
| Last Modified: | 12 Jul 2011 07:54 |
| URI: | http://eprints.iisc.ac.in/id/eprint/38771 |
Actions (login required)
 |
View Item |
