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Process-kinetics in facing targets sputtering of multi-component oxide thin films

Nathan, Senthil S and Rao, Mohan G and Mohan, S (1999) Process-kinetics in facing targets sputtering of multi-component oxide thin films. In: Thin Solid Films, 347 (1-2). pp. 14-24.

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Official URL: http://dx.doi.org/10.1016/S0040-6090(98)01615-0


The kinetics of the processes in facing targets sputtering of multicomponent oxide films is presented. The novel configuration of the process exhibits an enhanced ionization efficiency. Discharge diagnostics performed using optical emission spectroscopy revealed strong dependence of plasma parameters on process conditions. Numerical simulation based on thermalization and diffusion of sputtered atoms has been performed to estimate the transport efficiency in off-axis mode. Composition, structure and epitaxial quality of YBa2Cu3O7-x films prepared was found to be strongly dependent on atomic flux ratios (of Cu/Y and Ba/Y) arriving at the substrate, resputtering effect and phase stability of YBa2Cu3O7-x These studies have been shown to be useful in understanding the complex processes that occur in sputtering of multicomponent films. (C) 1999 Elsevier Science S.A. All rights reserved.

Item Type: Journal Article
Publication: Thin Solid Films
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Deposition process;Oxides;Plasma processing and deposition;Sputtering
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 28 Jun 2011 09:54
Last Modified: 06 Nov 2018 12:12
URI: http://eprints.iisc.ac.in/id/eprint/38735

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