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X-ray reflectivity study of semiconductor interfaces

Sanyal, MK and Datta, A and Banerjee, S and Srivastava, AK and Arora, BM and Kanakaraju, S and Mohan, S (1997) X-ray reflectivity study of semiconductor interfaces. In: Journal of Synchrotron Radiation, 4 (part 3). pp. 185-190.

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Official URL: http://scripts.iucr.org/cgi-bin/paper?S09090495960...


The results of an X-ray reflectivity study of thick AlAs-AlGaAs and thin GeSi-Ge multilayers grown using metal-organic vapour-phase epitaxy and ion-beam sputtering deposition techniques, respectively, are presented. Asymmetry in interfaces is observed in both of these semiconductor multilayers. It is also observed that although the Si-on-Ge interface is sharp, an Si0.4Ge0.6 alloy is formed at the Ge-on-Si interface. In the case of the III-V semiconductor, the AlAs-on-AlGaAs interface shows much greater roughness than that observed in the AlGaAs-on-AlAs interface. For thin multilayers it is demonstrated that the compositional profile as a function of depth can be obtained directly from the X-ray reflectivity data.

Item Type: Journal Article
Publication: Journal of Synchrotron Radiation
Publisher: International Union of Crystallography
Additional Information: Copyright of this article belongs to International Union of Crystallography.
Keywords: X-ray reflectivity;semiconductor multilayers;interfacial diffusion.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 22 Jun 2011 07:59
Last Modified: 16 Oct 2018 09:40
URI: http://eprints.iisc.ac.in/id/eprint/38571

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