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The effect of aluminosilicate on the delayed onset of upturn voltages of zinc oxide varistor ceramics

Kutty, TRN and Ezhilvalavan, S (1997) The effect of aluminosilicate on the delayed onset of upturn voltages of zinc oxide varistor ceramics. In: Materials Science and Engineering B, 47 (2). pp. 101-109.

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Official URL: http://dx.doi.org/10.1016/S0921-5107(97)02039-4


The effect of aluminosilicate (Al2SiO5) on the upturn characteristics of ZnO varistor ceramics has been investigated. Addition of Al2SiO5 shifts the point of upturn above 10(4) A cm(-2). The extended nonlinearity in the high current density region is better correlatable to the presence of higher density of trap stales and changing pattern of trap depths at the grain boundary interface as much as the grain interior conductivity. Microstructure studies show the formation and involvement of a liquid phase during sintering. The secondary phases, predominantly are antimony spinel, Zn7Sb2O12, zinc silicate, Zn2SiO4 and magnesium aluminium silicate. MgAl2Si3O10. Energy dispersive X-ray analyses (EDAX) show that Al and Si are distributed more in the grain boundaries and within the secondary phases than in the grain interiors. Capacitance-voltage analyses and dielectric dispersion studies indicate the presence of negative capacitance and associated resonance, indicative of the oscillatory charge redistribution involving increased trapping at the interface states. The admittance spectroscopy data show that the type of trap slates remains unaltered whereas the addition of Al2SiO5 increases the density of low energy traps. (C) 1997 Published by Elsevier Science S.A.

Item Type: Journal Article
Publication: Materials Science and Engineering B
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Aluminosilicate;Dielectric dispersion;Microstructures
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 22 Jun 2011 07:08
Last Modified: 22 Jun 2011 07:08
URI: http://eprints.iisc.ac.in/id/eprint/38533

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