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Reactivation kinetics of boron acceptors in hydrogenated silicon during zero bias anneal

Majumdar, Amlan and Balasubramanian, Sathya and Venkataraman, V and Balasubramanian, N (1997) Reactivation kinetics of boron acceptors in hydrogenated silicon during zero bias anneal. In: Journal of Applied Physics, 82 (1). 192-195 .

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The reactivation kinetics of passivated boron accepters in hydrogenated silicon during zero bias annealing in the temperature range of 65-130 degrees C are reported, For large annealing times and high annealing temperatures, the reactivation process follows second-order kinetics and is rate limited by a thermally activated <(H)over tilde (2)> complex formation process, For short annealing times and low annealing temperatures, the reactivation rate is found to be larger than that due to <(H)over tilde (2)> complex formation alone. We conclude that the faster reactivation is caused by the diffusion of the liberated hydrogen atoms into the bulk as well as <(H)over tilde (2)> complex formation. The effective diffusion coefficient of hydrogen is measured and found to obey the Arrhenius relation with an activation energy (1.41 +/- 0.1) eV. (C) 1997 American Institute of Physics.

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 30 Jun 2011 13:43
Last Modified: 30 Jun 2011 13:43
URI: http://eprints.iisc.ac.in/id/eprint/38379

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