ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Electrical and Optical Properties of Diketopyrrolopyrrole-Based Copolymer Interfaces in Thin Film Devices

Adil, Danish and Kanimozhi, Catherine and Ukah, Ndubuisi and Paudel, Keshab and Patil, Satish and Guha, Suchi (2011) Electrical and Optical Properties of Diketopyrrolopyrrole-Based Copolymer Interfaces in Thin Film Devices. In: ACS Applied Materials & Interfaces, 3 (5). pp. 1463-1471.

[img] PDF
Electrical.pdf - Published Version
Restricted to Registered users only

Download (4MB) | Request a copy
Official URL: http://pubs.acs.org/doi/abs/10.1021/am200028u

Abstract

Two donor acceptor diketopyrrolopyrrole (DPP)-based copolymers (PDPP-BBT and TDPP-BBT) have been synthesized for their application in organic devices such as metal-insulator semiconductor (MIS) diodes and field-effect transistors (FETs). The semiconductor-dielectric interface was characterized by capacitance-voltage and conductance-voltage methods. These measurements yield an interface trap density of 4.2 x 10(12) eV(-1) cm(-2) in TDPP-BBT and 3.5 x 10(12) eV(-1) cm(-2) in PDPP-BBT at the flat-band voltage. The FETs based on these spincoated DPP copolymers display p-channel behavior with hole mobilities of the order 10(-3) cm(2)/(V s). Light scattering studies from PDPP-BBT FETs show almost no change in the Raman spectrum after the devices are allowed to operate at a gate voltage, indicating that the FETs suffer minimal damage due to the metal-polymer contact or the application of an electric field. As a comparison Raman intensity profile from the channel-Au contact layer in pentacene FETs are presented, which show a distinct change before and after biasing.

Item Type: Journal Article
Publication: ACS Applied Materials & Interfaces
Publisher: American Chemical Society
Additional Information: Copyright of this article belongs to American Chemical Society.
Keywords: diketopyrrolopyrrole;donor-acceptor;metal-insulator-semiconductor;field-effect transistors;capacitance-voltage characteristics;Raman scattering
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 17 Jun 2011 08:11
Last Modified: 17 Jun 2011 08:11
URI: http://eprints.iisc.ac.in/id/eprint/38233

Actions (login required)

View Item View Item