Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

Rajpalke, Mohana K and Roul, Basanta and Kumar, Mahesh and Bhat, Thirumaleshwara N and Sinha, Neeraj and Krupanidhi, SB (2011) Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. In: Scripta Materialia, 65 (1). pp. 33-36.

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Abstract

We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Publication:	Scripta Materialia
Publisher:	Elsevier Science
Additional Information:	Copyright of this article belongs to Elsevier Science.
Keywords:	Molecular beam epitaxy;High-resolution X-ray diffraction; Nonpolar GaN;Photoluminescence
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	15 Jun 2011 07:13
Last Modified:	15 Jun 2011 07:13
URI:	http://eprints.iisc.ac.in/id/eprint/38209

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