Reactivation kinetics of acceptors in hydrogenated InP during unbiased annealing

Balasubramanian, Sathya and Balasubramanian, N and Kumar, Vikram (1995) Reactivation kinetics of acceptors in hydrogenated InP during unbiased annealing. In: Physical Review B: Condensed Matter, 51 (3). pp. 1536-1540.

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Abstract

The reactivation kinetics of passivated Mg acceptors in hydrogenated InP during unbiased annealing of a Schottky diode is reported. The reactivation is found to slow down gradually with annealing time and this phenomenon is attributed to substantial retrapping of H at the acceptor sites. It is found from the concentration profiles and the kinetics data that the reactivation is most likely limited by H2 molecule formation processes for longer annealing times; for shorter annealing times, contributions from in-diffusion of H also become significant. The diffusion of H during the initial period follows an Arrhenius relation with an activation energy for the effective diffusion coefficient of 1.13±0.10 eV. In the H2 formation regime, the reactivation is thermally activated with an activation energy for the annealing parameter of 1.71±0.10 eV. The H2 formation-limited regime of reactivation occurs sooner as the annealing temperature is increased.

Item Type:	Journal Article
Publication:	Physical Review B: Condensed Matter
Publisher:	The American Physical Society
Additional Information:	Copyright of this article belongs to The American Physical Society.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	24 May 2011 07:22
Last Modified:	24 May 2011 07:22
URI:	http://eprints.iisc.ac.in/id/eprint/37876

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