Optical and electrical properties of hydrogen-passivated gallium antimonide

Dutta, PS and Sangunni, KS and Bhat, HL and Kumar, Vikram (1995) Optical and electrical properties of hydrogen-passivated gallium antimonide. In: Physical Review B: Condensed Matter, 51 (4). pp. 2153-2158.

PDF OPTICAL_AND_ELECTRICAL.pdf - Published Version Restricted to Registered users only Download (1MB) | Request a copy

Abstract

The effect of hydrogen-plasma passivation on the optical and electrical properties of gallium antimonide bulk single crystals is presented. Fundamental changes of the radiative recombination after hydrogenation in undoped, zinc-doped, tellurium-doped, and codoped (with Zn and Te) GaSb are reported. The results of optical measurements indicate that passivation of acceptors is more efficient than that of the donors and, in general, the passivation efficiency depends on the doping level. Passivation of deep nonradiative centers is reflected by the gain of photoluminescence intensity and decrease in deep-level transient spectroscopy peak height. Extended defects like grain boundaries and dislocations have also been found to be passivated. The thermal stability of the passivated deep level and extended defects is higher than that of the shallow level. The kinetics of thermally released hydrogen in the bulk has been studied by reverse-bias annealing experiments.

Item Type:	Journal Article
Publication:	Physical Review B: Condensed Matter
Publisher:	The American Physical Society
Additional Information:	Copyright of this article belongs to The American Physical Society.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	24 May 2011 07:00
Last Modified:	24 May 2011 07:00
URI:	http://eprints.iisc.ac.in/id/eprint/37821

Actions (login required)

View Item