Raman study of pressure-induced structural transitions in CsIO4 to 12 GPa

Chandrabhas, N and Victor, D and Muthu, S and Sood, AK and Bhat, HL and Jayaraman, A (1992) Raman study of pressure-induced structural transitions in CsIO4 to 12 GPa. In: Journal of Physics and Chemistry of Solids, 53 (7). pp. 959-965.

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Abstract

High pressure Raman scattering studies have been carried out on cesium periodate (CsIO4) using the diamond anvil cell. Three pressure-induced phase transitions occur in the range 0.1�12 GPa as indicated by abrupt changes in the Raman spectra, and pressure dependence of the phonon frequencies. The transitions are observed at 1.5, 4.5 and 6.2 GPa in the increasing pressure cycle. A large hysteresis is noticed for the reverse transition when releasing the pressure. The high pressure phase is nearly quenchable to ambient pressure. The nature of the pressure-induced transitions are discussed in terms of the sequence of pressure-induced transitions expected for scheelite-pseudoscheelite structure ABO4 compounds from crystal chemical considerations. For the softening of the two high frequency internal modes, a pressure-induced electronic change involving the 5 d states of cesium and 5 p states of iodine is invoked.

Item Type:	Journal Article
Publication:	Journal of Physics and Chemistry of Solids
Publisher:	Elsevier science
Additional Information:	Copyright of this article belongs to Elsevier science.
Keywords:	Cesium periodate;Raman scattering;high pressure;phase transitions;scheelite structure.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	30 May 2011 09:47
Last Modified:	30 May 2011 09:47
URI:	http://eprints.iisc.ac.in/id/eprint/37536

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