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Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion

Atindra Pal, Nath and Ghatak, Subhamoy and Kochat, Vidya and ES, Sneha and Sampathkumar, Arjun and Raghavan, Srinivasan and Ghosh, Arindam (2011) Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion. In: ACS Nano, 5 (3). pp. 2075-2081.

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Official URL: http://pubs.acs.org/doi/abs/10.1021/nn103273n


A distinctive feature of single-layer graphene is the linearly dispersive energy bands, which in the case of multilayer graphene become parabolic. A simple electrical transport-based probe to differentiate between these two band structures will be immensely valuable, particularly when quantum Hall measurements are difficult, such as in chemically synthesized graphene nanoribbons. Here we show that the flicker noise, or the 1/f noise, in electrical resistance is a sensitive and robust probe to the band structure of graphene. At low temperatures, the dependence of noise magnitude on the carrier density was found to be opposite for the linear and parabolic bands. We explain our data with a comprehensive theoretical model that clarifies several puzzling issues concerning the microscopic origin of flicker noise in graphene field-effect transistors (GraFET).

Item Type: Journal Article
Publication: ACS Nano
Publisher: American Chemical Society
Additional Information: Copyright of this article belongs to American Chemical Society.
Keywords: graphene;noise;multilayer;1/f noise;charge impurity scattering.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 06 Apr 2011 10:21
Last Modified: 06 Apr 2011 10:21
URI: http://eprints.iisc.ac.in/id/eprint/36617

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