High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors

Majumdar, Kausik and Murali VRM, Kota and Bhat, Navakanta and Xia, Fengnian and Lin, Yu-Ming (2010) High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors. In: International Electron Devices Meeting (IEDM), DEC 06-08, 2010, San Francisco, CA.

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Abstract

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate the device, a self-consistent Non-Equilibrium Green's Function (NEGF) solver has been developed and validated against published experimental data. Using the simulator, we predict an on-off ratio in excess of 10(4) and a subthreshold slope of similar to 110mV/decade with excellent scalability and current saturation, for a 20nm gate length unipolar BLG FET. However, the performance of the proposed device is found to be strongly dependent on the S/D series resistance effect. The obtained results show significant improvements over existing reports, marking an important step towards bilayer graphene logic devices.

Item Type:	Conference Paper
Series.:	International Electron Devices Meeting
Publisher:	IEEE
Additional Information:	Copyright 2010 IEEE. Personal use of this material is permitted.However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	06 Apr 2011 09:47
Last Modified:	23 Oct 2018 14:46
URI:	http://eprints.iisc.ac.in/id/eprint/36609

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