Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium

Gurumurthy, S and Rao, KSRK and Sreedhar, AK and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumaran, V (1994) Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium. In: Bulletin of materials science, 17 (6). 1057 -1064 .

Preview

PDF INFLUENCE.pdf - Published Version Download (378kB)

Abstract

Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at similar to 1.14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.

Item Type:	Journal Article
Publication:	Bulletin of materials science
Publisher:	Indian Academy of Sciences
Additional Information:	Copyright of this article belongs to Indian Academy of Sciences.
Keywords:	Cadmium telluride;photoluminescence;annealing; stoiehiometry; indium doping.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	24 May 2011 08:42
Last Modified:	24 May 2011 08:42
URI:	http://eprints.iisc.ac.in/id/eprint/36548

Actions (login required)

View Item