Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Kumar, D and Satyalakshmi, KM and Manoharan , SS and Hegde, MS (1994) Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire. In: Bulletin of materials science, 17 (6). pp. 625-632.

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Abstract

Microstructural and superconducting properties of YBa2Cu3O7-x thin films grown in situ on bare sapphire by pulsed laser deposition using YBa2Cu3O7-x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730 degrees C on sapphire have shown very significant improvement over the undoped YBa2Cu3O7-x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1.2 x 10(6) A/cm(2) at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.

Item Type:	Journal Article
Publication:	Bulletin of materials science
Publisher:	Indian academy of sciences
Additional Information:	Copyright of this article belongs to Indian academy of sciences.
Keywords:	Pulsed laser deposition; Ag-doped YBa2Cu307_ x thin film; high critical current density; sapphire.
Department/Centre:	Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited:	01 Apr 2011 05:57
Last Modified:	01 Apr 2011 05:57
URI:	http://eprints.iisc.ac.in/id/eprint/36518

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