Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

Kumar, Rakesh P and Mahapatra, Santanu (2011) Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor. In: IEEE Transactions on Nanotechnology, 10 (1). pp. 121-128.

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Abstract

In this paper, a physically based analytical quantum linear threshold voltage model for short channel quad gate MOSFETs is developed. The proposed model, which is suitable for circuit simulation, is based on the analytical solution of 3-D Poisson and 2-D Schrodinger equation. Proposed model is fully validated against the professional numerical device simulator for a wide range of device geometries and also used to analyze the effect of geometry variation on the threshold voltage.

Item Type:	Journal Article
Publication:	IEEE Transactions on Nanotechnology
Publisher:	IEEE
Additional Information:	Copyright 2011 IEEE. Personal use of this material is permitted.However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords:	CMOS; compact modeling; multigate transistors; quantum effects
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	24 Mar 2011 06:09
Last Modified:	24 Mar 2011 06:09
URI:	http://eprints.iisc.ac.in/id/eprint/36200

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