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A study of the synthetic methods and properties of graphenes

Rao, CNR and Subrahmanyam, KS and Matte, Ramakrishna HSS and Abdulhakeem, B and Govindaraj, A and Das, Barun and Kumar, Prashant and Ghosh, Anupama and Late, Dattatray J (2010) A study of the synthetic methods and properties of graphenes. In: Science and Technology of Advanced Materials, 11 (5).

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Official URL: http://iopscience.iop.org/1468-6996/11/5/054502/

Abstract

Graphenes with varying number of layers can be synthesized by using different strategies. Thus, single-layer graphene is prepared by micromechanical cleavage, reduction of single-layer graphene oxide, chemical vapor deposition and other methods. Few-layer graphenes are synthesized by conversion of nanodiamond, arc discharge of graphite and other methods. In this article, we briefly overview the various synthetic methods and the surface, magnetic and electrical properties of the produced graphenes. Few-layer graphenes exhibit ferromagnetic features along with antiferromagnetic properties, independent of the method of preparation. Aside from the data on electrical conductivity of graphenes and graphene-polymer composites, we also present the field-effect transistor characteristics of graphenes. Only single-layer reduced graphene oxide exhibits ambipolar properties. The interaction of electron donor and acceptor molecules with few-layer graphene samples is examined in detail.

Item Type: Journal Article
Publication: Science and Technology of Advanced Materials
Publisher: Institute of Physics and National Institute of Materials Science
Additional Information: Copyright of this article belongs to Institute of Physics and National Institute of Materials Science.
Keywords: graphenes; surface variations; magnetic properties; electronic properties; field-effect transistor characteristics; preparation methods; charge-transfer; mechanical properties
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 18 Mar 2011 10:19
Last Modified: 18 Mar 2011 10:19
URI: http://eprints.iisc.ac.in/id/eprint/35977

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