Kinetic approach to dislocation bending in low-mobility films

Raghavan, Srinivasan (2011) Kinetic approach to dislocation bending in low-mobility films. In: Physical Review B: Condensed Matter and Materials Physics, 83 (5).

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Abstract

A kinetic model has been developed for dislocation bending at the growth surface in compressively stressed low-mobility films such as III-V nitrides. It is based on a reduction in the number of atoms at the growth surface. Stress and nonstress sources of driving force for such a reduction are discussed. A comparison between the derived equations and experimentally measured stress evolution data yields good agreement between the predicted and observed angles through which dislocations bend.

Item Type:	Journal Article
Publication:	Physical Review B: Condensed Matter and Materials Physics
Publisher:	The American Physical Society
Additional Information:	Copyright of this article belongs to The American Physical Society.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	09 Mar 2011 07:00
Last Modified:	09 Mar 2011 07:00
URI:	http://eprints.iisc.ac.in/id/eprint/35881

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