Effect of High Pressure on the Electrical Conductivity of TlInX2 (X = Se, Te) Layered Semiconductors

Rabinal, MK and Titus, SSK and Asokan, S and Gopal, ESR and Godzaev, MO and Mamedov, NT (1993) Effect of High Pressure on the Electrical Conductivity of TlInX2 (X = Se, Te) Layered Semiconductors. In: Physica Status Solidi B, 178 (2). pp. 403-408.

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Abstract

The dc electrical conductivity of TlInX2 (X = Se, Te) single crystals, parallel and perpendicular to the (001) c-axis is studied under high quasi-hydrostatic pressure up to 7.0 GPa, at room temperature. Conductivity measurements parallel to the c-axis are carried out at high pressures and down to liquid nitrogen temperatures. These materials show continuous metallization under pressure. Both compounds have almost the same pressure coefficient of the electrical activation energy parallel to the c-axis, d(ΔE∥)/dP = −2.9 × 10−10 eV/Pa, which results from the narrowing of the band gap under pressure. The results are discussed in the light of the band structure of these compounds.

Item Type:	Journal Article
Publication:	Physica Status Solidi B
Publisher:	John Wiley and Sons
Additional Information:	Copyright of this article belongs to John Wiley and Sons.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	10 Feb 2011 09:14
Last Modified:	24 Oct 2011 04:45
URI:	http://eprints.iisc.ac.in/id/eprint/35433

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