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Dislocation characterization in crystals of potash alum grown by seeded solution growth under conditions of low supersaturation

Bhat, HL and RistiImage, RI and Sherwood, JN and Shripathi, T (1992) Dislocation characterization in crystals of potash alum grown by seeded solution growth under conditions of low supersaturation. In: Journal of Crystal Growth, 121 (4). pp. 709-716.

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Official URL: http://dx.doi.org/10.1016/0022-0248(92)90577-6


An analysis has been carried out of the genesis and character of growth dislocations present in all growth sectors of single crystals of potash alum. The crystals, grown from seeded solutions by the temperature lowering method under conditions of low supersaturation, presented the well-developed forms: {111} dominant, {100} and {110}. Growth dislocations formed predominately during refacetting of the edges and corners of the seed, rounded during preparation and insertion into the supersaturated solution. From here they become refracted into the {111} sectors which proved to be the most defective. Smaller numbers of dislocations form at the {111}, {100} and {110} seed interfaces and propagate in these sectors. In crystals of inferior quality, a number of inclusions were found predominantly in the fast growing {100} sectors which become the source of additional dislocations. Dislocations present in the original seed did not propagate across the interface into the developing crystal. Dislocations of all characters were observed. The principal Burgers vectors were found to be left angle bracket100right-pointing angle bracket, left angle bracket110right-pointing angle bracket and left angle bracket111right-pointing angle bracket.

Item Type: Journal Article
Publication: Journal of Crystal Growth
Publisher: Elsevier science
Additional Information: Copyright of this article belongs to Indian Academy of Sciences.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 25 Jan 2011 04:38
Last Modified: 25 Jan 2011 04:38
URI: http://eprints.iisc.ac.in/id/eprint/35173

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