Electronic states in a disordered metal: Magnetotransport in doped germanium

Rosenbaum, TF and Pepke, S and Bhatt, RN and Ramakrishnan, TV (1990) Electronic states in a disordered metal: Magnetotransport in doped germanium. In: Physical Review B: Condensed Matter and Materials Physics, 42 (17). pp. 11214-11217.

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Abstract

We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H∼25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.

Item Type:	Journal Article
Publication:	Physical Review B: Condensed Matter and Materials Physics
Publisher:	The American Physical Society
Additional Information:	Copyright of this article belongs to The American Physical Society.
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	11 Feb 2011 08:20
Last Modified:	11 Feb 2011 08:20
URI:	http://eprints.iisc.ac.in/id/eprint/35124

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