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Dielectric relaxation in bismuth layer-structured BaBi4Ti4O15 ferroelectric ceramics

Kumar, Sunil and Varma, KBR (2011) Dielectric relaxation in bismuth layer-structured BaBi4Ti4O15 ferroelectric ceramics. In: Current Applied Physics, 11 (2). pp. 203-210.

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Official URL: http://dx.doi.org/10.1016/j.cap.2010.07.008


The dielectric properties of BaBi4Ti4O15 ceramics were investigated as a function of frequency (10(2)-10(6) Hz) at various temperatures (30 degrees C-470 degrees C), covering the phase transition temperature. Two different conduction mechanisms were obtained by fitting the complex impedance data to Cole-Cole equation. The grain and grain boundary resistivities were found to follow the Arrhenius law associated with activation energies: E-g similar to 1.12 eV below T-m and E-g similar to 0.70 eV above T-m for the grain conduction; and E-gb similar to 0.93 eV below T-m and E-gb similar to 0.71 eV above T-m for the grain boundary conduction. Relaxation times extracted using imaginary part of complex impedance Z `'(omega) and modulus M `'(omega) were also found to follow the Arrhenius law and showed an anomaly around the phase transition temperature. The frequency dependence of conductivity was interpreted in terms of the jump relaxation model and was fitted to the double power law. (C) 2010 Elsevier B. V. All rights reserved.

Item Type: Journal Article
Publication: Current Applied Physics
Publisher: Elsevier Science
Additional Information: Copyright of this article belongs to Elsevier Science.
Keywords: Dielectric relaxation; Ferroelectrics; AC conductivity
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 21 Dec 2010 09:37
Last Modified: 21 Dec 2010 09:37
URI: http://eprints.iisc.ac.in/id/eprint/34582

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