Misra, NK and Venkatasubramanian, VS (1979) Impurity diffusion in bismuth single-crystals. In: Indian Journal of Physics A and Proceedings of the Indian Association for the Cultivation of Science A, 53 (1-2). pp. 100-102.
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Measurements of impurity diffusion of 86Rb, 90Sr, 133Ba, and 137Cs in single crystal Bi were carried out. Diffusion samples were prepared from single crystal Bi by ion implantation. About 1012-1013 ions were implanted, resulting in surface activities approx =104 cpm. After implantation, specimens were annealed for specified times at 220-265 deg C, and tracer penetration profiles were determined by an electrolytic method. A typical penetration profile for 137Cs in Bi showed a linear relationship for log C vs x in with Fick's law for volume diffusion. Laws of grain boundary diffusion were not obeyed and the order of magnitude of the penetration distances was much less than on a grain boundary mechanism. Results were interpreted in terms of a modified Fischer analysis using a kinetic trapping term. Effective half lengths for trapping at a twin boundary were determined for each impurity.
| Item Type: | Journal Article |
|---|---|
| Publication: | Indian Journal of Physics A and Proceedings of the Indian Association for the Cultivation of Science A |
| Publisher: | Indian Assn Cultivation Sci |
| Additional Information: | Copyright of this article belongs to Indian Assn Cultivation Sci. |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 15 Dec 2010 10:43 |
| Last Modified: | 15 Dec 2010 10:43 |
| URI: | http://eprints.iisc.ac.in/id/eprint/34387 |
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