Varistor property of n‐BaTiO3 based current limiters

Kutty, TRN and Ravi, V (1991) Varistor property of n‐BaTiO3 based current limiters. In: Applied Physics Letters, 59 (21). pp. 2691-2693.

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Abstract

Highly stable varistor (voltage-limiting) property is observed for ceramics based on donor doped (Ba1-xSrx)Ti1-yZryO3 (x < 0.35, y < 0.05), when the ambient temperature (T(a)) is above the Curie point (T(c)). If T(a) < T(c), the same ceramics showed stable current-limiting behavior. The leakage current and the breakdown voltage as well as the nonlinearity coefficient (alpha = 30-50) could be varied with the T(c)-shifting components, the grain boundary layer modifiers and the post-sintering annealing. Analyses of the current-voltage relations show that grain boundary layer conduction at T(a) < T(c) corresponds to tunneling across asymmetric barriers formed under steady-state joule heating. At T(a) > T(c), trap-related conduction gives way to tunneling across symmetric barriers as the field strength increases.

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	07 Dec 2010 06:50
Last Modified:	07 Dec 2010 06:50
URI:	http://eprints.iisc.ac.in/id/eprint/34353

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